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MMST4403 Datasheet(PDF) 1 Page - Rohm |
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MMST4403 Datasheet(HTML) 1 Page - Rohm |
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1 / 4 page  SST4403 / MMST4403 Transistors Rev.C 1/3 PNP Medium Power Transistor (Switching) SST4403 / MMST4403 Features 1) BVCEO = −40V (Min.) ; at IC= −1mA 2) Complements the SST4401 / MMST4401 Package, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) SST4403 SST3 R2T T116 3000 MMST4403 SMT3 R2T T146 3000 Absolute maximum ratings (Ta=25 °C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Tj Tstg Limits −40 −40 −6 −0.6 150 −55 to +150 Unit V V V A Collector power dissipation PC 0.2 0.35 W W ˚C ˚C ∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE + + Dimensions (Unit : mm) SST4403 MMST4403 ROHM : SST3 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO −40 −40 −5 − − − − − − − − − − −0.1 −0.1 V V V µA µA IC= −100µA IC= −1mA IE= −100µA VCB= −35V VEB= −5V −− −1.3 Base-emitter saturation voltage VBE(sat) −0.75 −−0.95 V −− −0.75 IC/IB = −500mA/ −50mA Collector-emitter saturation voltage VCE(sat) −− −0.4 V IC/IB = −150mA/ −15mA IC/IB= −500mA/ −50mA IC/IB= −150mA/ −15mA 20 −− 100 − 300 DC current transfer ratio hFE 100 −−− 60 −− 30 −− VCE = −1V, IC= −0.1mA VCE= −1V, IC= −1mA VCE = −1V, IC= −10mA VCE= −1V, IC= −150mA VCE= −2V, IC= −500mA Transition frequency Collector output capacitance fT Cob 200 − − − − 8.5 MHz pF VCE= −10V, IE=20mA, f=100MHz VCB= −10V, f=100kHz Emitter input capacitance Cib −− 30 pF VEB= −0.5V, f=100kHz Delay time td −− 15 ns VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA VCC= −30V, VEB(OFF)= −2V, IC= −150mA, IB1= −15mA Rise time tr −− 20 ns Storage time tstg −− 225 ns VCC= −30V, IC= −150mA, IB1= −IB2= −15mA VCC= −30V, IC= −150mA, IB1= −IB2= −15mA Fall time tf −− 30 ns |
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