iC-HB

TRIPLE 155 MHz LASER SWITCH

Rev A4, Page 4/8

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3.5...5.5 V, VTTL = 3.15...5.5 V, Tj = -25...125 °C unless otherwise stated

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

Total Device

001

VDD

Permissible Supply Voltage

3.5

5.5

V

002

VTTL

Permissible Supply Voltage at

VTTL

3.15

5.5

003

I(VDD)

Supply Current in VDD

CW operation

2

8

mA

004

I(VDD)

Supply Current in VDD

pulsed operation, f(ENx, EPx) = 150 MHz

80

mA

005

I(VTTL)

Supply Current in VTTL

1

mA

006

V(LDKx)

Permissible Voltage at LDK1,

LDK2, LDKB

0

5.5

V

007

Vc(CIx)hi

Clamp Voltage hi at CI1, CI2, CIB Vc(CIx) = V(CIx) − VDD, I(CIx) = 10 mA, other

pins open

0.4

1.25

V

008

Vc(TTL)hi

Clamp Voltage hi at TTL

Vc(TTL)hi = V(TTL) − VDD, I(TLL) = 0.1 mA,

other pins open

0.4

1.25

V

009

Vc(SYNx)hi Clamp Voltage hi at SYN1,

SYN2, SYNB

Vc(SYNx)hi = V(SYNx) − VTTL, I(EN) = 1 mA,

other pins open

0.4

1.25

V

010

Vc()lo

Clamp Voltage lo at VDD, LDK,

CI1, CI2, CIB, EN1, EN2, ENB,

EP1, EP2, EPB, TTL, AGND1,

AGND2, AGNDB, NER, VTTL,

SYN1, SYN2, SYNB, IMON

I() = -10 mA, other pins open

-1.25

-0.4

V

011

Ipd()

Pull-Down Current at CI1, CI2,

CIB, TTL

V() = 0.7...5.5 V

0.5

5

µA

012

Ipd(EPx)

Pull-Down Current at EP1, EP2,

EPB

TLL = hi, V() = 0.7...5.5 V

0.5

5

µA

013

Toff

Overtemperature Shutdown

120

165

°C

Laser Control

101

Icw(LDKx) Permissible CW Current in LDK1,

LDK2

65

mA

102

Icw(LDKB) Permissible CW Current in LDKB

60

mA

103

Ipk(LDKx)

Permissible Pulsed Current in

LDK1, LDK2

300

mA

104

Ipk(LDKB) Permissible Pulsed Current in

LDKB

275

mA

105

Vsat(LKDx) Saturation Voltage at LKD1,

LKD2, LDKB

I(LDKx) = 30 mA

0.8

V

I(LDKx) = 60 mA

1.2

V

106

Imon()

Switching Channels 1, 2

V(IMON) > 1.5 V, V(LDKx) > 1.5 V

1/105

1/85

I(LDKx)

107

Imon()

Bias Channel

V(IMON) > 1.5 V, V(LDKx) > 1.5 V

1/80

1/70

I(LDKB)

108

I0(LDKx)

Leakage Current in LDK1, LDK2,

LDKB

V(EPx) < V(ENx), V(LDKx) = VDD

0

10

µA

109

tr()

Current Rise Time at LDK1,

LDK2, LDKB

Iop(LDKx) = 55 mA, I(LDKx): 10% → 90%Iop,

cf. Fig. 1

1.5

ns

110

tf()

Current Fall Time at LDK1, LDK2,

LDKB

Iop(LDKx) = 55 mA, I(LDKx): 90% → 10%Iop,

cf. Fig. 1

1.5

ns

111

tp()

Propagation Delay

V(EPx, ENx) → I(LDKx)

10

ns

112

Vcm()

Common Mode Input Voltage

Range at ENx, EPx

TLL = lo;

VDD = 3.5...5.5 V

0.8

2.3

V

VDD = 4.5...5.5 V

0.6

2.3

V

113

Vd()

Input Differential Voltage at ENx,

EPx

TLL = lo

-100

100

mV

114

R()

Differential Input Impedance at

ENx, EPx

TLL = lo,

V(ENx) < VDD − 2 V, V(EPx) < VDD − 2 V

0.6

3

kΩ

115

Vt(TTL)hi

Input Threshold Voltage hi

2

V

116

Vt(TTL)lo

Input Threshold Voltage low

VDD = 5 V

0.8

V

117

Vhys(TTL) Hysteresis

100

mV