MMIC

AP211

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 5.4

Product Features

Applications

• 50 ~ 3000 MHz

• GaAs MMIC

• 42dBm Output IP3

• 13dB Gain

• 24dBm P1dB

• Single +5V Supply

• CDMA, W-CDMA Medium Power Amplifier

• High Linearity Drive Amplifier

Description

AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.

AP211 is designed for applications such as GSM, CDMA, W-CDMA drive devices which require high IP3.

PARAMETER

UNIT

MIN

TYP

MAX

Gain

dB

12

13

-

Input Return Loss

dB

-

-20

-

Output Return Loss

dB

-

-22

-

Output IP3

dBm

38

42

-

1dB Compression Point

dBm

-

24

-

Noise Figure

dB

-

2.5

-

DC Current

mA

-

230

-

Supply Voltage

VDC

-

5

-

Thermal Resistance (Rth)

℃/W

-

-

33

OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz

Absolute Maximum Ratings

PARAMETER

UNIT

MIN

MAX

Device Voltage

VDC

-

8

RF Input Power

dBm

-

10

Storage Temperature

℃

-40

150

Operating Ranges

PARAMETER

UNIT

MIN

TYP

MAX

Operating Frequency

MHz

50

-

3000

Device Voltage

VDC

-

5

6

Case Temperature

℃

-40

-

85

Package Type : SOIC-8