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ZTX413 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZTX413
Description  NPN SILICON PLANAR AVALANCHE TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX413 Datasheet(HTML) 2 Page - Diodes Incorporated

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NPN SILICON PLANAR
AVALANCHE TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 – MARCH 94
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC
200
mA
Peak Collector Current (25ns Pulse Width)
ICM
50
A
Power Dissipation
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CES
150
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus)
50
V
IC=10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
6V
IE=100µA
Collector Cut-Off Current ICBO
0.1
µ
A
VCB=120V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.15
V
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.8
V
IC=10mA, IB=1mA
Current in Second
Breakdown (Pulsed)
IUSB
22
31
A
A
VC=110V, CCE=4.7nF*
VC=130V, CCE=4.7nF*
Static Forward Current
Transfer Ratio
hFE
50
IC=10mA, VCE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
E-Line
TO92 Compatible
ZTX413
3-169
C
B
E
TYPICAL CHARACTERISTICS
0.2
0.4
0.6
0.8
T - Temperature (°C)
0
-60
-20
20
60
100
140
180
0
Derating Curve
20
10
0
40
50
30
Avalanche Current v Supply Voltage
VS - Supply Voltage (V)
CCE=2x4.7nF
050
100
150
200
250
CCE=4.7nF
CCE=2.2nF
CCE=1.0nF
Tamb=25°C
IB=5mA/ns
p.r.f.=10KHz
ZTX413
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Emitter Inductance
Le
6
nH
With 3mm leads
Transition Frequency
fT
150
MHz
IC=10mA, VCE=5V
f=20MHz
Collector-Base
Capacitance
Ccb
2pF
VCB=10V, IE=0
f=1MHz
.
3-170
Not Recommended for New Design
Please Use ZTX415



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