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STGIPL20K60 Datasheet(PDF) 8 Page - STMicroelectronics |
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STGIPL20K60 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 24 page ![]() Electrical characteristics STGIPL20K60 8/24 DocID018946 Rev 3 3 Electrical characteristics T j = 25 °C unless otherwise specified. Note: ton and toff include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition. Table 7. Inverter part Symbol Parameter Test condition Value Unit Min. Typ. Max. V CE(sat) Collector-emitter saturation voltage V CC = V Boot = 15 V, V IN (1) = 0 - 5 V, I C = 12 A -2.2 2.75 V V CC = V Boot = 15 V, V IN (1) = 0 - 5 V, I C = 12 A, T j = 125 °C -1.8 I CES Collector-cut off current (V IN (1) = 0 “logic state”) V CE = 550 V V CC = V boot = 15 V - 150 μA V F Diode forward voltage V IN (1) = 0 “logic state”, I C = 12 A - 1.7 2.1 V Inductive load switching time and energy t on Turn-on time V DD = 300 V, V CC = V boot = 15 V, V IN (1) = 0 - 5 V, I C = 12 A (see Figure 3) -915 ns t c(on) Crossover time (on) - 155 t off Turn-off time - 375 t c(off) Crossover time (off) - 120 t rr Reverse recovery time - 75 E on Turn-on switching losses - 300 μJ E off Turn-off switching losses - 170 1. Applied between HINi LINi and GND for i = U, V, W (LIN inputs are active-low). |
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