F00111C datasheet(2/3 Pages) SSDI

2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00111C

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF240J

SFF240JR

Electrical Characteristics 4/

Symbol

Min

Typ

Max Units

Drain to Source Breakdown Voltage

VGS= 0 V, ID= 1 mA

BVDSS

200

220

––

Drain to Source On State Resistance

VGS= 10 V, ID= 11 A, TJ= 25°C

VGS= 10 V, ID= 11 A, TJ=125°C

VGS= 10 V, ID= 18 A, TJ= 25°C

RDS(on)

––

0.13

0.25

0.135

0.18

0.48

0.25

Ω

On State Drain Current

VDS > ID(on) x RDS(on) Max, VGS= 10 V, TJ= 25°C

ID(on)

––

Gate Threshold Voltage

VDS= VGS, ID= 250 μA, TJ= 25°C

VDS= VGS, ID= 250 μA, TJ= 125°C

VDS= VGS, ID= 250 μA, TJ= -55°C

VGS(th)

2.0

1.0

––

3.0

2.2

3.5

4.0

––

Forward Transconductance

VDS ≥ 10 V, IDS= 10 A, TJ= 25°C

gfs

6.5

––

S (Ʊ)

Zero Gate Voltage

Drain Current

VDS= max rated voltage, VGS= 0 V, TJ= 25°C

VDS= max rated voltage, VGS= 0 V, TJ= 125°C

IDSS

––

0.02

250

μA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS, TJ= 25°C

IGSS1

––

100

-100

At rated VGS, TJ= 125°C

IGSS2

––

200

-200

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS= 10 V

VDS= 100 V

Rated ID

Qgs

Qgd

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VDD= 100 V

ID= 11 A

RG= 9.1 Ω

VGS= 10 V

td(on)

td(off)

––

nsec

Diode Forward Voltage

IS= Rated ID, VGS= 0 V, TJ= 25°C

VSD

––

1.5

Diode Reverse Recovery Time

Reverse Recovery Charge

TJ= 25°C, IF= Rated ID, di/dt= 100 A/μsec

trr

Qrr

––

290

2.6

500

5.3

nsec

μC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS= 0 V

VDS= 25 V

f= 1 MHz

Ciss

Coss

Crss

––

1200

450

150

––

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