F00165H datasheet(2/2 Pages) SSDI

2 / 2 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00165H

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF27N50M

SFF27N50Z

Electrical Characteristics 5/

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

VGS = 0V, ID = 250μA

BVDSS

500

510

––

Drain to Source On State

Resistance

VGS = 10V, ID = 18A, Tj= 25

VGS = 10V, ID = 18A, Tj=125

RDS(on)

––

150

400

175

––

mΩ

Gate Threshold Voltage

VDS = VGS, ID = 4.0mA, Tj= 25

VDS = VGS, ID = 4.0mA, Tj= 125

VDS = VGS, ID = 4.0mA, Tj= -55

VGS(th)

3.0

2.0

––

4.0

3.0

5.0

––

Gate to Source Leakage

VGS = ±20V, Tj= 25

VGS = ±20V, Tj= 125

IGSS

––

±100

––

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V, Tj = 25

VDS = 500V, VGS = 0V, Tj = 125

IDSS

––

0.01

5.0

500

μA

Forward Transconductance

VDS = 20V, ID = 18A, Tj = 25

gfs

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10V

VDS = 250V

ID = 18A

Qgs

Qgd

––

150

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VGS = 10V

VDS = 250V

ID = 35A

RG = 3.0Ω, pw= 3us

td(on)

td(off)

––

150

nsec

Diode Forward Voltage

IF = 35A, VGS = 0V

VSD

––

0.95

1.5

Diode Reverse Recovery Time

Diode Reverse Recovery Current

Reverse Recovery Charge

IF = 25A, di/dt = 100A/usec

trr

IRM

Qrr

––

180

8.0

0.85

250

––

nsec

μC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

Ciss

Coss

Crss

––

4700

540

––

Available Part Numbers:

Consult Factory

PIN ASSIGNMENT (Standard)

Package

Drain

Source

Gate

TO-254 (M)

Pin 1

Pin 2

Pin 3

TO-254Z (Z)

Pin 1

Pin 2

Pin 3

TO254 (M)

PIN 1

PIN 3

PIN 2

TO254Z (Z)

PIN 3

PIN 2

PIN 1

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