NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00201D

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

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└ Screening

TX = TX Level

TXV = TXV Level

S = S Level

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└ Lead Option

3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

└ Package

Z = TO-254Z

TO-254 (M)

TO-254Z (Z)

SFF20N60M

SFF20N60Z

20 AMP / 600 Volts

Typ 0.30 Ω

N-Channel POWER MOSFET

Features:

 Rugged Construction with Polysilicon Gate

 Excellent High Temperature Stability

 Very Fast Switching Speed

 Fast Recovery and Superior dV/dt performance

 Increased Reverse Energy Capability

 Low Input and Transfer Capacitance for Easy Paralleling

 Hermetically Sealed, Isolated Surface Mount Power Package

 Ceramic Seals for Improved Hermeticity

 TX, TXV, S-Level screening available

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

600

Volts

Gate – Source Voltage

±30

Volts

Continues Drain Current

20

Amps

Avalanche Energy, repetitive

Avalanche energy, single pulse

0.03

1.0

J

Power Dissipation

150

114

W

Operating & Storage Temperature

Top & Tstg

-55 to +175

ºC

Maximum Thermal Resistance

Junction to Case

0.83

ºC/W

Case Outline: TO-254 (M)

Case Outline: TO-254Z (Z)

Optional Lead Bend Configuration

MDB & ZDB

MUB & ZUB

Suffixes