SOLID STATE DEVICES, INC.

SFF75N06M

SFF75N06Z

FEATURES:

DATA SHEET #: F00311B

MAXIMUM RATINGS

• Advanced high-cell density withstands high energy

• Very low conduction and switching losses

• Fast recovery drain-to-source diode with soft recovery

• Rugged construction with poly silicon gate

• Ultra low RDS (on) and high transconductance

• Excellent high temperature stability

• Very fast switching speed

• Fast recovery and superior dv/dt performance

• Increased reverse energy capability

• Low input and transfer capacitance for easy paralleling

• Hermetically sealed package

• TX, TXV and Space Level screening available

75 AMP

60 VOLTS

15m

Ω

Ω

Ω

Ω

Ω

N-CHANNEL

POWER MOSFET

DESIGNER'S DATA SHEET

NOTE: All specifications are subject to change without notification.

SCDs for these devices should be reviewed by SSDI prior to release.

6 0

Volts

Drain to Gate Voltage (RGS = 1.0 m

Ω)

Ω)

Ω)

Ω)

Ω)

Continuous Drain Current

Drain to Source Voltage

60

Amps

Volts

Thermal Resistance, Junction to Case

Θ

Θ

Θ

ΘJC

-55 to +150

Operating and Storage Temperature

1

CHARACTERISTIC

SYMBOL

VALUE

UNIT

Watts

Total Device Dissipation

125

95

TO-254Z (Z)

TO-254 (M)

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

CASE OUTLINE: TO-254Z (Sufix Z)

CASE OUTLINE: TO-254 (Sufix M)

Available with Glass or Ceramic Seals. Contact Facory for details.

Gate to Source Voltage

+ 20

Volts

Pin Out:

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

Pin Out:

Pin 1: Drain

Pin 2: Source

Pin 3: Gate