LM3151 datasheet(4/27 Pages) TI1

4 / 27 page

LM3151, LM3152, LM3153

SNVS562G – SEPTEMBER 2008 – REVISED MARCH 2011

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

VIN to GND

-0.3V to 47V

SW to GND

-3V to 47V

BST to SW

-0.3V to 7V

BST to GND

-0.3V to 52V

All Other Inputs to GND

-0.3V to 7V

ESD Rating (3)

2kV

Storage Temperature Range

-65°C to +150°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions,

see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor into each pin. Test Method is per JESD-22-A114.

OPERATING RATINGS

(1)

VIN

6V to 42V

Junction Temperature Range (TJ)

−40°C to + 125°C

0V to 5V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions,

see the Electrical Characteristics.

ELECTRICAL CHARACTERISTICS

Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C

to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent

the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the

following conditions apply: VIN = 18V.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Start-Up Regulator, VCC

VCC

CVCC = 1 µF, 0 mA to 40 mA

5.65

5.95

6.25

IVCC = 2 mA, Vin = 5.5V

VIN - VCC

VIN - VCC Dropout Voltage

IVCC = 30 mA, Vin = 5.5V

330

IVCCL

VCC Current Limit

(1)

VCC = 0V

100

VCC Under-voltage Lockout threshold

4.75

5.1

5.40

VCCUVLO

VCC Increasing

(UVLO)

VCC-UVLO-HYS

VCC UVLO Hysteresis

VCC Decreasing

475

tCC-UVLO-D

VCC UVLO Filter Delay

µs

IIN

Input Operating Current

No Switching

3.6

5.2

IIN-SD

Input Operating Current, Device Shutdown VEN = 0V

µA

GATE Drive

IQ-BST

Boost Pin Leakage

VBST – VSW = 6V

RDS-HG-Pull-Up

HG Drive Pull–Up On-Resistance

IHG Source = 200 mA

Ω

RDS-HG-Pull-Down

HG Drive Pull–Down On-Resistance

IHG Sink = 200 mA

3.4

Ω

RDS-LG-Pull-Up

LG Drive Pull–Up On-Resistance

ILG Source = 200 mA

3.4

Ω

RDS-LG-Pull-Down

LG Drive Pull–Down On-Resistance

ILG Sink = 200 mA

Ω

(1)

VCC provides self bias for the internal gate drive and control circuits. Device thermal limitations limit external loading.

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