FP0025E datasheet(2/3 Pages) SSDI

2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0025E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF9130M

SFF9130Z

Electrical Characteristics3/

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS = 0V, ID = 1mA)

BVDSS

-100

––

Temperature Coefficient of Breakdown Voltage

∆BVDSS

∆Tj

––

mV/°C

Drain to Source On State Resistance

(VGS = -10V)

ID=7A

ID=11A

RDS(on)

––

0.30

0.35

Ω

Gate Threshold Voltage

(VDS = VGS, ID = -250A)

VGS(th)

-2.0

––

-4.0

Forward Transconductance

(VDS > ID(on) x RDS(on) Max, IDS = 7A)

gfs

3.0

5.0

––

S(Ʊ)

Zero Gate Voltage Drain Current

(VDS = 80% max rated voltage, VGS = 0V)

(VDS = 80% rated VDS, VGS = 0V, TA=125°C)

IDSS

––

-25

250

A

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At Rated VGS

IGSS

––

-100

100

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = -10V

50% rated VDS

ID = -11A

Qgs

Qgd

9.5

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VDD = 50%

Rated VDS

ID = 11 A

RG = 7.5Ω

t(on)

td(off)

––

140

nsec

Diode Forward Voltage

IS = Rated ID

VGS = 0V

TJ = 25ºC

VSD

––

-4.7

Diode Reverse Recovery Time

Reverse Recovery Charge

TJ = 25ºC

IF = 10A

di/dt = 100A/µsec

trr

Qrr

––

125

––

250

nsec

µC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = -25V

f = 1 MHz

Ciss

Coss

Crss

––

860

350

125

––

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