SOLID STATE DEVICES, INC.

SFF9130-28D

PRELIMINARY

V

Drain to Source Breakdown Voltage

(VGS =0 V, ID =1mA)

-

-

RATING

SYMBOL

MIN

TYP

MAX

UNIT

-100

S

(VGS = -10 V)

-

-

0.30

0.35

-

-

V

Gate Threshold Voltage

(VDS =VGS, ID =250

:A)

-

-4.0

-2.0

S(

É)

Forward Transconductance

(VDS > ID(on) x RDS (on) Max, IDS = 7A)

5.0

-

3.0

:A

Zero Gate Voltage Drain Current

-

-

-

-

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

-

-

-100

100

-

-

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = -10 Volts

50% rated VDS

ID = -11A

Qg

Qgs

Qgd

15

1

2

26

3

14

29

7.1

21

nsec

Turn on Delay Time

Rise Time

Turn off DELAY Time

Fall Time

VDD = 50% of

rated VDS

ID = 11A

RG = 7.5

S

tr

tf

-

-

-

-

15

10

30

12

60

140

140

140

V

-

-4.7

-

Diode Reverse Recovery Time

Reverse Recovery Charge

125

-

250

3

-

-

IF = 10A

di/dt = 100A/

:sec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0 Volts

VDS = -25 Volts

f = 1 MHz

Ciss

Coss

Crss

-

-

-

860

350

125

-

-

-

pF

nsec

:C

For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.

Diode Forward Voltage

nC

nA

-25

250

NOTES:

1/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize

V

Temperature Coefficient of Breakdown Voltage

0.87

-

-

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773