FT0001 datasheet(2/2 Pages) SSDI

2 / 2 page

SOLID STATE DEVICES, INC.

SFF75N06-28

PRELIMINARY

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

ELECTRICAL CHARACTERISTICS @ TJ =25

oC (Unless Otherwise Specified)

Drain to Source Breakdown Voltage

(VGS =0 V, ID =250

:A)

BVDSS

RATING

SYMBOL

MIN

TYP

MAX

UNIT

Drain to Source

ON State Resistance 2/

(VGS = 10 V)

RDS(on)

Gate Threshold Voltage

(VDS =VGS, ID =250

:A)

VGS(th)

É)

Forward Transconductance

(VDS > ID(on) x RDS (on) Max,

IDS =60% rated ID)

gfs

Zero Gate Voltage Drain Current

(VDS =80% rated VDS, VGS =0 V, TA = 25

oC )

(VDS =80% rated VDS, VGS =0 V, TA = 125

oC )

IDSS

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

IGSS

100

At rated VGS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS =10 Volts

50% rated VDS

Rated ID

Qgs

Qgd

100

nsec

Turn on Delay Time

Rise Time

Turn off DELAY Time

Fall Time

VDD =50%

rated VDS

rated ID

RG = 6.2

td (on)

td (off)

130

1.47

VSD

1.6

Diode Reverse Recovery Time

Reverse Recovery Charge

trr

150

TJ =25oC

IF = 10A

di/dt = 100A/

:sec

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS =0 Volts

VDS =25 Volts

f =1 MHz

Ciss

Coss

Crss

2600

700

260

2900

1100

275

nsec

For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.

Diode Forward Voltage

(IS = rated ID, VGS = 0V, TJ = 25

oC)

100

60% of Rated ID, TC = 25

Rated ID, TC = 25

60% of Rated ID, TC = 150

NOTES:

1/ Die Rating: 75Amps.

2/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize

RDS(on) and maximize current carrying capability.

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