NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0029B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SMD1, 2

Note

1/ maximum current limited by package configuration

SFF23N60S1

SFF23N60S2

21 AMP, 600 Volts, 320 mΩ

Avalanche Rated N-channel

MOSFET

Features:

•

Rugged poly-Si gate

•

Lowest ON-resistance in the industry

•

Avalanche rated

•

Hermetically Sealed, Hot Case power SMD

•

Low Total Gate Charge

•

Fast Switching

•

TX, TXV, S-Level screening available

•

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

600

V

Gate – Source Voltage

continuous

transient

±30

±40

V

Max. Continuous Drain Current (package limited)

21

10

A

Pulsed Drain (Instantaneous) Current (Tj limited)

30

A

Max. Avalanche current

@ L= 0.1 mH

30

A

Single / Repetitive Avalanche Energy

@ L= 0.1 mH

1500 / 30

mJ

Total Power Dissipation

300

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case

0.42 (typ 0.3)

ºC/W

SMD 1

SMD 2