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BU4508DF Datasheet(PDF) 2 Page - Savantic, Inc. |
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BU4508DF Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU4508DF CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 3 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.03 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 7 hFE-2 DC current gain IC=5A ; VCE=5V 4.2 7.3 VF Diode forward voltage IF=5A 2.2 V |
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