NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: PM0028A

DOC

SPMQ613-02

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

600V, 400A FAST SWITCHING IGBT

HALF BRIDGE

Designer’s Data Sheet

FEATURES:

•

Hermetic construction, electrically isolated from the

heatsinking baseplate

•

Fast switching

•

dual IGBT die with ultrafast freewheeling diode

•

Low switching and conduction losses

•

TX, TXV, and Space Level Screening Available

Part Number/Ordering Information

1/

SPMQ613-02 __

└ Screening

2/

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

MAXIMUM RATINGS

3/

SYMBOL

VALUE

UNIT

Collector – Emitter Breakdown Voltage

600

V

Gate – Emitter Voltage

±20

V

Max. Continuous Collector Current

400

200

A

Pulsed Collector Current

600

A

200

A

10

mJ

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance (Junction to Case)

Per switch

0.25

ºC/W

500

1

W

W/ºC

Notes:

1/ For ordering information, price, and availability- Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25ºC.