Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR1

__ __ __

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

│

│

│

│

│

SMS = Surface Mount Square Tab

│

│

│

│

│

│

│

│

│

└

-14 = 1400 V

-16 = 1600 V

SDR1-12 thru SDR1-16

and

SDR1-12SMS and SDR1-16SMS

1.0 AMP

1200 ─ 1600 VOLTS

70 nsec ULTRA FAST RECTIFIER

FEATURES:

•

Ultra Fast Recovery: 70 ns Max @ 25

•

Single Chip Construction

•

PIV to 1600 Volts

•

Low Reverse Leakage Current

•

Hermetically Sealed

•

For High Efficiency Applications

•

Available in Axial and Surface Mount Versions

•

Metallurgically Bonded

•

TX, TXV, and S-Level Screening Available

2/

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse

Voltage

And

DC Blocking Voltage

SDR1-12 and SDR1-12SMS

SDR1-14 and SDR1-14SMS

SDR1-16 and SDR1-16SMS

1200

1400

1600

Volts

Rectified Forward Forward Current

1

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

25

Amps

Operating & Storage Temperature

-65 to +175

°

C

Thermal Resistance, Junction to Lead, L = 3/8” (Axial)

Junction to End Tab (SMS)

35

18

°

C/W

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on

Request.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

Axial Leaded

SMS

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0103B

DOC