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1N4148WS Datasheet(PDF) 2 Page - General Semiconductor |
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1N4148WS Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 4 page ![]() 1N4148W, 1N4148WS ELECTRICAL CHARACTERISTICS Ratings at 25 ¡C ambient temperature unless otherwise specified SYMBOL MIN. TYP. MAX. UNIT Forward Voltage at IF=10 mA VF Ð Ð 1.0 Volts Leakage Current at VR = 20 V IR Ð Ð 25 nA at VR = 75 V IR Ð Ð 5.0 mA at VR = 20 V, Tj = 150 ¡C IR ÐÐ 50 mA Capacitance at VF = VR = 0 V Ctot ÐÐ 4 pF Voltage Rise when Switching On tested with 50 mA Pulses Vfr Ð Ð 2.5 Volts tp = 0.1 ms, Rise Time < 30ns, fp = 5 to 100 kHZ Reverse Recovery Time from IF = 10 mA to IR = 1mA, trr ÐÐ 4 ns VR = 6 V, RL = 100 W Thermal Resistance Junction to Ambient Air 1N4148W RthJA Ð Ð 450(2) ¡C/W 1N4148WS RthJA Ð Ð 650(2) ¡C/W Rectification Efficiency h v 0.45 Ð Ð Ð at f = 100 MHZ, VRF = 2 V NOTES:: (2) Valid provided that electrodes are kept at ambient temperature Rectification Efficiency Measurement Circuit |
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