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1N4448W Datasheet(PDF) 1 Page - General Semiconductor

Part # 1N4448W
Description  Small Signal Diodes
PDF  4 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

1N4448W Datasheet(HTML) 1 Page - General Semiconductor

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FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
.067 (1.70)
min. .010 (0.25)
Cathode Mark
Top View
.055 (1.40)
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
4/98
1N4448W
Symbol
Value
Unit
Reverse Voltage
VR
75
V
Peak Reverse Voltage
VRM
100
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ≥ 50 Hz
I0
1501)
mA
Surge Forward Current at t < 1 s and Tj = 25 °C
IFSM
500
mA
Power Dissipation at Tamb = 25 °C
Ptot
5001)
mW
Junction Temperature
Tj
175
°C
Storage Temperature Range
TS
–65 to +175
°C
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other case styles including:
the DO-35 case with the type designation 1N4448, the
MiniMELF case with the type designation LL4448, and
the SOT23 case with the type designation IMBD4448.
♦
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