IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTA06N120P

IXTP06N120P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

0.28

0.45

S

C

iss

236

pF

C

oss

V

15

pF

C

rss

3.2

pF

t

d(on)

19

ns

t

r

37

ns

t

d(off)

35

ns

t

f

34

ns

Q

g(on)

13.3

nC

Q

gs

V

2.4

nC

Q

gd

7.8

nC

R

thJC

3.0

°C/W

R

thCS

(TO-220)

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

0.6 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1.8 A

V

SD

I

1.5 V

t

rr

I

900

ns

V

Note 1. Pulse test, t

≤ 300 μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Pins: 1 - Gate

2 - Drain

TO-220 (IXTP) Outline

Resistive Switching Times

V

R

TO-263 (IXTA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom

Side