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2N3906 Datasheet(PDF) 3 Page - General Semiconductor |
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2N3906 Datasheet(HTML) 3 Page - General Semiconductor |
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3 / 3 page ![]() 2N3906 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz hfe 100 400 Ð Output Admittance at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz hoe 140 mS Noise Figure at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF Ð 4 dB Delay Time (see Fig. 1) at ÐIB1 = 1 mA, ÐIC = 10 mA td Ð35 ns Rise Time (see Fig. 1) at ÐIB1 = 1 mA, ÐIC = 10 mA tr Ð35 ns Storage Time (see Fig. 2) at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA ts Ð 225 ns Fall Time (see Fig. 2) at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA tf Ð75 ns Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors |
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