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2N4124 Datasheet(PDF) 2 Page - General Semiconductor |
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2N4124 Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 5 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified 2N4124 Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 1 V, IC = 2.0 mA at VCE = 1 V, IC = 50 mA hFE hFE 120 – – 60 360 – – – Collector-Base Cutoff Current at VCB = 20 V ICBO ––50 nA Emitter-Base Cutoff Current at VEB = 3 V IEBO ––50 nA Collector Saturation Voltage at IC = 50 mA, IB = 5 mA VCESAT ––0.3 V Base Saturation Voltage at IC = 50 mA, IB = 5 mA VBESAT ––0.95 V Collector-Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 25 – – V Collector-Base Breakdown Voltage at IC = 10 µA V(BR)CBO 30 – – V Emitter-Base Breakdown Voltage at IE = 10 µA V(BR)EBO 5–– V Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz fT – 200 – MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz CCBO –12 – pF Thermal Resistance Junction to Ambient Air RthJA – – 2001) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case |
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