2N4126 datasheet(2/5 Pages) GE

2 / 5 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

2N4126

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = –1 V, IC = –2.0 mA

at VCE = –1 V, IC = –50 mA

hFE

120

–

360

–

Collector Cutoff Current

at VCB = –20 V

–ICBO

––50

Emitter Cutoff Current

at VEB = –3 V

–IEBO

––50

Collector Saturation Voltage

at IC = –50 mA, IB = –5 mA

–VCESAT

––0.4

Base Saturation Voltage

at IC = –50 mA, IB = –5 mA

–VBESAT

––0.95

Collector-Emitter Breakdown Voltage

at IC = –1 mA

–V(BR)CEO

––V

Collector-Base Breakdown Voltage

at IC = –10 µA

–V(BR)CBO

––V

Emitter-Base Breakdown Voltage

at IE = –10 µA

–V(BR)EBO

4––V

Gain-Bandwidth Product

at VCE = –5 V, IC = –10 mA, f = 50 MHz

–

200

–

MHz

Collector-Base Capacitance

at VCB = –10 V, f = 1 MHz

CCBO

–12

–

Thermal Resistance Junction to Ambient Air

RthJA

–

2001)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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