2N7002 datasheet(1/5 Pages) GE

Part #	2N7002

Description	DMOS Transistors (N-Channel)

PDF	5 Pages

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Manufacturer	GE [General Semiconductor]

Direct Link	http://www.vishay.com

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FEATURES

DMOS Transistors (N-Channel)

Dimensions in inches and (millimeters)

.016 (0.4)

.037(0.95) .037(0.95)

.122 (3.1)

.016 (0.4)

3

12

Top View

.102 (2.6)

.118 (3.0)

.094 (2.4)

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Pin configuration

1 = Gate, 2 = Source, 3 = Drain

SOT-23

4/98

2N7002

Marking

S72

Inverse Diode

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage

VDGS

60

V

Gate-Source-Voltage (pulsed)

VGS

±20

V

Drain Current (continuous)

ID

250

mA

Power Dissipation at TC = 50 °C

Ptot

0.3101)

W

Junction Temperature

Tj

150

°C

Storage Temperature Range

TS

–55 to +150

°C

1) Ceramic Substrate 0.7mm; 2.5 cm2 area.

Symbol

Value

Unit

Max. Forward Current (continuous)

at Tamb = 25 °C

IF

0.3

A

Forward Voltage Drop (typ.)

at VGS = 0, IF = 0.3 A, Tj = 25 °C

VF

0.85

V

♦ High input impedance

♦ High-speed switching

♦ No minority carrier storage time

♦ CMOS logic compatible input

♦ No minority carrier storage time

♦ CMOS logic compatible input

♦ No thermal runaway

♦ No secondary breakdown

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