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BAV101 Datasheet(PDF) 1 Page - General Semiconductor

Part # BAV101
Description  Small Signal Diodes
PDF  4 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BAV101 Datasheet(HTML) 1 Page - General Semiconductor

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FEATURES
Small Signal Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)
Cathode Mark
.134 (3.4)
.011 (0.28)
4/98
BAV100 THRU BAV103
Symbol
Value
Unit
Reverse Voltage
BAV100
BAV101
BAV102
BAV103
VR
VR
VR
VR
60
120
200
250
V
V
V
V
Forward DC Current at Tamb = 25 °C
IF
2501)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ≥ 50 Hz
I0
2001)
mA
Repetitive Peak Forward Current
at f
≥ 50 Hz, Θ = 180 °C, T
amb = 25 °C
IFRM
6251)
mA
Surge Forward Current at t < 1 s, Tj = 25 °C
IFSM
1A
Power Dissipation at Tamb = 25 °C
Ptot
4001)
mW
Junction Temperature
Tj
175
°C
Storage Temperature Range
TS
–65 to +175
°C
1) Valid provided that electrodes are kept at ambient temperature.
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
♦
♦
♦


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