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BAV19 Datasheet(PDF) 2 Page - General Semiconductor |
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BAV19 Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 4 page  ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAV19 THRU BAV21 Symbol Min. Typ. Max. Unit Forward voltage at IF = 100 mA VF ––1 V Leakage Current at VR = 100 V BAV19 at VR = 100 V, Tj = 100 °C BAV19 at VR = 150 V BAV20 at VR = 150 V, Tj = 100 °C BAV20 at VR = 200 V BAV21 at VR = 200 V, Tj = 100 °C BAV21 IR IR IR IR IR IR – – – – – – – – – – – – 100 15 100 15 100 15 nA µA nA µA nA µA Dynamic Forward Resistance at IF = 10 mA rf –5– Ω Capacitance at VR = 0, f = 1 MHz Ctot –1.5 –pF Reverse Recovery Time from IF = 30 mA through IR = 30 mA to IR = 3 mA; RL = 100 Ω trr ––50 ns Thermal Resistance Junction to Ambient Air RthJA – – 3751) 2) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case |
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