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BAV19W Datasheet(PDF) 2 Page - General Semiconductor |
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BAV19W Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 4 page  ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAV19W THRU BAV21W Symbol Min. Typ. Max. Unit Forward voltage at IF = 100 mA VF ––1 V Leakage Current at VR = 100 V BAV19W at VR = 100 V, Tj = 100 °C BAV19W at VR = 150 V BAV20W at VR = 150 V, Tj = 100 °C BAV20W at VR = 200 V BAV21W at VR = 200 V, Tj = 100 °C BAV21W IR IR IR IR IR IR – – – – – – – – – – – – 100 15 100 15 100 15 nA µA nA µA nA µA Dynamic Forward Resistance at IF = 10 mA rf –5– Ω Capacitance at VR = 0, f = 1 MHz Ctot –1.5 –pF Reverse Recovery Time from IF = 30 mA through IR = 30 mA to IR = 3 mA; RL = 100 Ω trr ––50 ns Thermal Resistance Junction to Ambient Air RthJA – – 3751) K/W 1) Valid provided that electrodes are kept at ambient temperature |
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