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BC337 Datasheet(PDF) 2 Page - General Semiconductor

Part # BC337
Description  Small Signal Transistors (NPN)
PDF  5 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BC337 Datasheet(HTML) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BC337, BC338
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group -16
-25
-40
at VCE = 1 V, IC = 300 mA
Current Gain Group -16
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
Collector-Emitter Cutoff Current
at VCE = 45 V
BC337
at VCE = 25 V
BC338
at VCE = 45 V, Tamb = 125 °C
BC337
at VCE = 25 V, Tamb = 125 °C
BC338
ICES
ICES
ICES
ICES
2
2
100
100
10
10
nA
nA
µA
µA
Collector-Emitter Breakdown Voltage
at IC = 10 mA
BC338
BC337
V(BR)CEO
V(BR)CEO
20
45
V
V
Collector-Emitter Breakdown Voltage
at IC = 0.1 mA
BC338
BC337
V(BR)CES
V(BR)CES
30
50
V
V
Emitter-Base Breakdown Voltage
at IE = 0.1 mA
V(BR)EBO
5–
–V
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCEsat
––
0.7
V
Base-Emitter Voltage
at VCE = 1 V, IC = 300 mA
VBE
––
1.2
V
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
100
MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
–12
pF
Thermal Resistance Junction to Ambient Air
RthJA
––
2001)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case



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