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BS208 Datasheet(PDF) 2 Page - General Semiconductor |
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BS208 Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 5 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 –V(BR)DSS 240 250 – V Gate-Body Leakage Current at –VGS = 15 V, VDS = 0 –IGSS ––10 nA Drain Cutoff Current at –VDS = 130 V, VGS = 0 at –VDS = 70 V, –VGS = 0.2 V –IDSS –IDSX – – – – 1 25 µA µA Gate-Source Threshold Voltage at VGS = VDS, –ID = 1 mA –VGS(th) 0.8 1.5 2.5 V Drain-Source ON Resistance at –VGS = 5 V, –ID = 100 mA RDS(ON) –714 Ω Thermal Resistance Junction to Ambient Air RthJA – – 1501) K/W Capacitances at –VDS = 20 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Ciss Coss Crss – – – 200 30 10 – – – pF pF pF Switching Times at –ID = 200 mA, –UGS = 10 V Turn-on Time Fall Time ton tf – – 5 15 – – ns ns 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. BS208 |
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