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BS209 Datasheet(PDF) 2 Page - General Semiconductor |
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BS209 Datasheet(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BS209 Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V –V(BR)DSS 400 430 – V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V –IGSSF – – 100 nA Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V –IGSSR – – 100 nA Drain Cutoff Current at –VDS = 400 V, VGS = 0 V –IDSS – – 500 nA Gate-Source Threshold Voltage at VGS = VDS, –ID = 250 µA –VGS(th) 11.5 2.5 V Drain-Source ON Resistance at –VGS = 5 V, –ID = 120 mA RDS(on) –50 60 Ω Capacitance at –VDS = 25 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance CiSS COSS CrSS – – – 200 30 10 – – – pF pF pF Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time ton toff – – 10 50 – – ns ns Thermal Resistance Junction to Ambient Air RthJA – – 1501) K/W 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. |
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