BS809 datasheet(2/2 Pages) GE

2 / 2 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

BS809

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0 V

V(BR)DSS

400

430

–

Gate-Body Leakage Current, Forward

at VGSF = 20 V, VDS = 0 V

IGSSF

–

100

Gate-Body Leakage Current, Reverse

at VGSR = 20 V, VDS = 0 V

IGSSR

–

100

Drain Cutoff Current

at VDS = 400 V, VGS = 0 V

IDSS

–

500

Gate-Source Threshold Voltage

at VGS = VDS, ID = 250 µA

VGS(th)

11.5

2.5

Drain-Source ON Resistance

at VGS = 5 V, ID = 100 mA

RDS(on)

–18

Ω

Capacitances

at VDS = 25 V, VGS = 0 V, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

CiSS

COSS

CrS

–

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

toff

–

Thermal Resistance Junction to Substrate

Backside

RthSB

3201)

Thermal Resistance Junction to Ambient Air

RthJA

–

4501)

K/W

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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