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BY396P Datasheet(PDF) 1 Page - General Semiconductor

Part # BY396P
Description  SOFT RECOVER FAST - SWITCHING PLASTIC RECTIFIER
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BY396P Datasheet(HTML) 1 Page - General Semiconductor

  BY396P Datasheet HTML 1Page - General Semiconductor BY396P Datasheet HTML 2Page - General Semiconductor  
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BY396P THRU BY399P
SOFT RECOVER FAST - SWITCHING PLASTIC RECTIFIER
Reverse Voltage - 100 to 800 Volts
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ High surge current capability
♦ Construction utilizes void-free
molded plastic technique
♦ 3.0 Ampere operation at
TA=50°C with no thermal runaway
♦ Fast switching for high efficiency
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BY396P
BY397P
BY398P
BY399P
UNITS
Maximum repetitive peak reverse voltage
VRRM
100
200
400
800
Volts
Maximum RMS voltage
VRMS
70
140
280
560
Volts
Maximum DC blocking voltage
VDC
100
200
400
800
Volts
Maximum average forward rectified current
0.375” (9.5mm) lead lengths at TA=50°C
I(AV)
3.0
Amps
Peak forward surge current
10ms single half sine-wave superimposed on
IFSM
100.0
Amps
rated load at TA=50°C
Maximum repetitive peak forward surge (NOTE 1)
IFRM
10.0
Amps
Maximum instantaneous forward voltage at 3.0A
VF
1.25
Volts
Maximum DC reverse current
TA= 25°C
10.0
at rated DC blocking voltage
TA=100°C
IR
500.0
µA
Maximum reverse recovery time (NOTE 2)
trr
500.0
ns
Maximum forward recovery time at 100mA, di/d = 50A/
µstfr
1.0
µs
Typical junction capacitance (NOTE 3)
CJ
28.0
pF
Typical thermal resistance (NOTE 4)
R
ΘJA
22.0
°C/W
Operating junction temperature range
TJ
-50 to +125
°C
Storage temperature range
TSTG
-50 to +150
°C
NOTES:
(1) Repetitive peak forward surge current at f<15 KHZ
(2) Reverse recovery test conditions: IF=10mA, IR=10mA, Irr=1.0mA
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length with both leads to heat sink
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
DO-201AD
Dimensions in inches and (millimeters)


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