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ES3F Datasheet(PDF) 1 Page - General Semiconductor

Part # ES3F
Description  SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

ES3F Datasheet(HTML) 1 Page - General Semiconductor

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ES3F AND ES3G
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 300 to 400 Volts
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ For surface mount applications
♦ Low profile package
♦ Built-in strain relief
♦ Ideal for automated placement
♦ Easy pick and place
♦ Superfast recovery time for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:
250°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
ES3F
ES3G
UNITS
Device marking code
EF
EG
Maximum repetitive peak reverse voltage
VRRM
300
400
Volts
Working peak reverse voltage
VRWM
225
300
Volts
Maximum RMS voltage
VRMS
210
280
Volts
Maximum DC blocking voltage
VDC
300
400
Volts
Maximum average forward rectified current at TL=100°C
I(AV)
3.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
100
Amps
rated load (JEDEC Method) at TL=100°C
Maximum instantaneous forward voltage at 3.0A
VF
1.10
Volts
Maximum DC reverse current
TA=25°C
10.0
at working peak reverse voltage
TA=100°C
IR
350
µA
Maximum reverse recovery time (NOTE 1)
trr
35
ns
Maximum reverse recovery time (NOTE 2)
trr
50
ns
Maximum reverse recovery current (NOTE 2)
IRM
3.0
Amps
Maximum stored charge (NOTE 2)
Qrr
50
ns
Typical junction capacitance (NOTE 3)
CJ
30
pF
Typical thermal resistance (NOTE 4)
R
ΘJA
50
R
ΘJL
15
°C/W
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at IF=1.0A, di/dt=100A/
µs, VR=30V, Irr=0.1IRM
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
NOTICE: Advanced product information is subject to change without notice
4/98
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.305 (7.75)
0.320 (8.13)
0.260 (6.60)
0.280 (7.11)
0.079 (2.06)
0.103 (2.62)
0.220 (5.59)
0.245 (6.22)
0.126 (3.20)
0.114 (2.90)
MAX.
DO-214AB
Dimensions in inches and (millimeters)
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