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GF1A Datasheet(PDF) 1 Page - General Semiconductor |
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GF1A Datasheet(HTML) 1 Page - General Semiconductor |
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1 / 2 page ![]() GF1A THRU GF1M SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for surface mount automotive applications ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Built-in strain relief ♦ Easy pick and place ♦ High temperature soldering guaranteed: 450°C/5 seconds at terminals ♦ Complete device submersible temperature of 265°C for 10 seconds in solder bath MECHANICAL DATA Case: JEDEC DO-214BA molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 ounces, 0.120 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNITS Device marking code GA GB GD GG GJ GK GM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified current at TL=125°C I(AV) 1.0 Amp Peak forward surge current 8.3ms single half sine-wave superimposed on IFSM 30.0 Amps rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A VF 1.10 1.20 Volts Maximum DC reverse current TA=25°C 5.0 at rated DC blocking voltage TA=125°C IR 50.0 µA Typical reverse recovery time (NOTE 1) trr 2.0 µs Typical junction capacitance (NOTE 2) CJ 15.0 pF Typical thermal resistance (NOTE 3) R ΘJA 80.0 °C/W R ΘJL 26.0 Operating junction and storage temperature range TJ, TSTG -65 to +175 °C NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied VR=4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas 4/98 0.167 (4.24) 0.187 (4.75) 0.0065 (0.17) 0.0105 (0.27) 0.030 (0.76) 0.060 (1.52) 0.006 0.152 TYP. 0.196 (4.98) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.106 (2.69) 0.118 (3.00) 0.040 (1.02) 0.060 (1.52) 0.098 (2.49) 0.108 (2.74) DO-214BA ® Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 |
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