Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFT501 __ __ __

SFT503 __ __ __

TX = TX Level

TXV = TXV Level

S

= S Level

│

│

│

│

│

│

│

└

R = Reverse

│

│

│

│

│

│

│

│

│

SFT501/G and SFT503/G

Series

5 AMP

200 Volts

PNP HIGH SPEED

Power Transistor

Features:

• Fast Switching

• High Frequency, 80 MHz Typical

• BVCEO 150 Volts Min

• High Linear Gain

• Low Saturation Voltage and Leakage

• 200ºC Operating Temperature

• Gold Eutectic Die Attach

• Designed for Complementary Use with SFT502/G

and SFT504/G

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

150

Volts

Collector – Base Voltage

200

Volts

Emitter – Base Voltage

7.0

Volts

Continues Collector Current

5.0

Amps

Base Current

1.0

Amps

Power Dissipation @ TC = 50ºC

Derate above 50ºC

10

0.10

W

mW/ºC

Operating & Storage Temperature

Top & Tstg

-65 to +200

ºC

Maximum Thermal Resistance

Junction to Case

4.0

ºC/W

Cerpack

NOTES:

* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500

3/ For Package Outlines Contact Factory.

4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

Available Part Numbers:

SFT501/G

SFT503/G

SFT501/GR

SFT503/GR

PIN ASSIGNMENT

Code

Function

Base

Pin 1

Pin 2

-

Normal

Collector

Emitter

Base

R

Reverse

Collector

Base

Emitter

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

B17BH DATA SHEET #: TR0018D

DOC