NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

B17BH DATA SHEET #: TR0100B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFT501 __ __ __

SFT503 __ __ __

│

│

│

│

│

│

│

│

│

└

│

│

│

│

│

│

│

└

TX = TX Level

TXV = TXV Level

S = S Level

R = Reverse

JC = TO-257, ceramic seals

SFT501J and SFT503J

SFT501JC and SFT503JC

Series

5 AMP

200 Volts

HIGH SPEED

PNP Transistor

Features:

 Fast Switching

 High Frequency, 80 MHz Typical

 BVCEO 150 Volts Min

 High Linear Gain

 Low Saturation Voltage and Leakage

 200ºC Operating Temperature

 Gold Eutectic Die Attach

 Designed for Complementary Use with SFT502/G

and SFT504/G

 TX, TXV, and S Level Screening Available

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

150

Volts

Collector – Base Voltage

200

Volts

Emitter – Base Voltage

7

Volts

Continues Collector Current

5

Amps

Base Current

1

Amps

Power Dissipation @ TC = 100ºC

Derate above 100ºC

20

200

W

mW/ºC

Operating & Storage Temperature

Top & Tstg

-65 to +200

ºC

Maximum Thermal Resistance

Junction to Case

5 (typ 3)

ºC/W

NOTES:

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500

3/ For Package Outlines Contact Factory.

4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

Available Part Numbers:

SFT501J

SFT501JC

SFT503J

SFT503JC

TO-257

PIN ASSIGNMENT

Code

Function

Pin 1

Pin 2

Pin 3

-

Normal

Collector

Emitter

Base

R

Reverse

Collector

Base

Emitter