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MBR2535CT Datasheet(PDF) 1 Page - General Semiconductor

Part # MBR2535CT
Description  SCHOTTKY RECTIFIER
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MBR2535CT Datasheet(HTML) 1 Page - General Semiconductor

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MBR2535CT THRU MBR2560CT
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts
Forward Current - 30.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Dual rectifier construction, positive center-tap
♦ Metal silicon junction,
majority carrier conduction
♦ Low power loss,
high efficiency
♦ High current capability, low forward voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR2535CT
MBR2545CT
MBR2550CT
MBR2560CT
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum working peak reverse voltage
VRWM
35
45
50
60
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current at TC=130°C
I(AV)
30.0
Amps
Peak repetitive forward current per leg at TC=130°C
(rated VR, square wave, 20 KHZ)
IFRM
30.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
150.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Amps
Maximum instantaneous forward voltage IF=15.0A,TC=25°C
-
0.75
per leg at: (NOTE 2)
IF=15.0A,TC=25°C
-
0.65
IF= 30A, TC=25°C
VF
0.82
-
Volts
IF= 30A, TC=125°C
0.73
-
Maximum instantaneous reverse current at
rated DC blocking voltage per leg (NOTE 2)
TC=25°C
IR
0.2
1.0
mA
TC=125°C
40.0
50.0
Maximum thermal resistance (NOTE 3)
R
ΘJC
1.5
°C/W
Voltage rate of change (rated VR)
dv/dt
10,000
V/
µs
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
NOTES:
(1) 2.0
µs pulse width, f=1.0 KHZ
(2) Pulse test: 300
µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case per leg
4/98
0.415 (10.54) MAX.
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
160 (4.06)
140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
0.110 (2.79)
0.100 (2.54)
PIN
1
2
3
PIN 1
PIN 3
CASE
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.105 (2.67)
0.095 (2.41)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN 2
0.370 (9.40)
0.360 (9.14)
TO-220AB
Dimensions in inches and (millimeters)


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