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MBR745 Datasheet(PDF) 1 Page - General Semiconductor

Part # MBR745
Description  SCHOTTKY RECTIFIER
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MBR745 Datasheet(HTML) 1 Page - General Semiconductor

  MBR745 Datasheet HTML 1Page - General Semiconductor MBR745 Datasheet HTML 2Page - General Semiconductor  
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MBR735 THRU MBR760
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts
Forward Current - 7.5 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal to silicon rectifier,
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward
voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum working peak reverse voltage
VRWM
35
45
50
60
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current (SEE FIG 1)
I(AV)
7.5
Amps
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
IFRM
15.0
Amps
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
150.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Amps
Maximum instantaneous
IF=7.5A, TC=25°C
-
0.75
forward voltage at
IF=7.5A, TC=125°C
VF
0.57
0.65
Volts
(NOTE 2)
IF=15A, TC=25°C
0.84
-
IF=15A, TC=125°C
0.72
-
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
IR
0.1
0.5
mA
(NOTE 1)
TC=125°C
15.0
50
Voltage rate of change (rated VR)
dv/dt
10,000
V/
µs
Maximum thermal resistance, (NOTE 3)
R
ΘJC
3.0
R
ΘJA
60.0
°C/W
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C
NOTES:
(1) 2.0
µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300
µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
4/98
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
12
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN
PIN 1
PIN 2
CASE
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
Dimensions in inches and (millimeters)


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