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IXTX210P10T Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTX210P10T Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C -100 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ -100 V V GSS Continuous ±15 V V GSM Transient ±25 V I D25 T C = 25°C (Chip Capability) - 210 A I LRMS Lead Current Limit, RMS -160 A I DM T C = 25°C, Pulse Width Limited by TJM - 800 A I A T C = 25°C -100 A E AS T C = 25°C3 J dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 1040 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = - 250μA -100 V V GS(th) V DS = VGS, ID = - 250μA - 2.5 - 4.5 V I GSS V GS = ±15V, VDS = 0V ±200 nA I DSS V DS = VDSS, VGS = 0V - 25 μA T J = 125°C - 300 μA R DS(on) V GS = -10V, ID = 0.5 • ID25, Note 1 7.5 m Ω IXTK210P10T IXTX210P10T V DSS = - 100V I D25 = - 210A R DS(on) ≤ ≤≤≤≤ 7.5m Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 200ns DS100397A(01/13) P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXTX) Tab G D S TO-264 (IXTK) S G D Tab TrenchPTM Power MOSFETs Features International Standard Packages High Current Handling Capability Avalanche Rated Extended FBSOA Fast Intrinsic Recitifier Low R DS(ON) and QG Advantages Easy to Mount Space Savings High Power Density Applications High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications Preliminary Technical Information |
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