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MPS2907A Datasheet(PDF) 2 Page - General Semiconductor

Part # MPS2907A
Description  SMALL SIGNAL TRANSISTORS (PNP)
PDF  3 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MPS2907A Datasheet(HTML) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at –IC = 10
µA, IE = 0
–V(BR)CBO
60
–
Volts
Collector-Emitter Breakdown Voltage
at –IC = 10 mA, IB = 0
–V(BR)CEO
60
–
Volts
Emitter-Base Breakdown Voltage
at –IE = 10
µA, IC = 0
–V(BR)EBO
5
–
Volts
Collector-Emitter Saturation Voltage
at –IC = 150 mA, –IB = 15 mA
–VCEsat
–
0.4
Volts
at –IC = 500 mA, –IB = 50 mA
–VCEsat
–
1.6
Volts
Base-Emitter Saturation Voltage
at –IC = 150 mA, –IB = 15 mA
–VBEsat
–
1.3
Volts
at –IC = 500 mA, –IB = 50 mA
–VBEsat
–
2.6
Volts
Collector Cutoff Current
at –VEB = 0.5 V, –VCE = 30 V
–ICEX
–50
nA
Collector Cutoff Current
–ICBO
µA
at –VCB = 50 V, IE = 0
0.01
at –VCB = 50 V, IE = 0, TA=150
°C–
10
Base Cutoff Current
at –VEB = 0.5 V, –VCE = 30 V
–IBL
–50
nA
DC Current Gain
at –VCE = 10 V, –IC = 0.1 mA
hFE
75
–
–
at –VCE = 10 V, –IC = 1 mA
hFE
100
–
–
at –VCE = 10 V, –IC = 10 mA
hFE
100
–
–
at –VCE = 10 V, –IC = 150 mA
hFE
100
300
–
at –VCE = 10 V, –IC = 500 mA
hFE
50
–
–
Gain-Bandwidth Product
at –VCE = 20 V, –IC = 50 mA, f = 100 MHz
fT
200
–
MHz
Output Capacitance
at –VCB = 10 V, f = 1 MHz, IE = 0
Cobo
–
8.0
pF
Emitter-Base Capacitance
at –VEB = 2.0 V, f = 1 MHz, IE = 0
Cibo
–30
pF
MPS2907A



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