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MPSA92 Datasheet(PDF) 2 Page - General Semiconductor

Part # MPSA92
Description  Small Signal Transistors (PNP)
PDF  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MPSA92 Datasheet(HTML) 2 Page - General Semiconductor

  MPSA92 Datasheet HTML 1Page - General Semiconductor MPSA92 Datasheet HTML 2Page - General Semiconductor  
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
MPSA92, MPSA93
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
MPSA92
–IC = 10 mA, IB = 0
MPSA93
–V(BR)CEO
–V(BR)CEO
300
200
–
–
–
–
V
V
Collector-Base Breakdown Voltage
MPSA92
–IC = 100 µA, IE = 0
MPSA93
–V(BR)CBO
–V(BR)CBO
300
200
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
–IE = 100 µA, IC = 0
–V(BR)EBO
5––
V
Collector-Base Cutoff Current
–VCB = 200 V, IE = 0
MPSA92
–VCB = 160 V, IE = 0
MPSA93
–ICBO
–ICBO
–
–
–
–
250
250
nA
nA
Emitter-Base Cutoff Current
–VEB = 3 V, IC = 0
–IEBO
–
–
100
nA
DC Current Gain
–IC = 1 mA, –VCE = 10 V
–IC = 10 mA, –VCE = 10 V
–IC = 30 mA, –VCE = 10 V
hFE
hFE
hFE
25
40
25
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
–IC = 20 mA, –IB = 2 mA
–VCEsat
–
–
500
mV
Base-Emitter Saturation Voltage
–IC = 20 mA, –IB = 2 mA
–VBEsat
–
–
900
mV
Gain-Bandwidth Product
–IC = 10 mA, –VCE = 20 V, f = 100 MHz
fT
50
–
–
MHz
Collector-Base Capacitance
–VCB = 20 V, IE = 0, f = 1 MHz
MPSA92
MPSA93
CCBO
CCBO
–
–
–
–
6
8
pF
pF
Thermal Resistance Junction to Ambient Air
RthJA
–
–
2001)
K/W
1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.



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