3SK255 datasheet(2/8 Pages) NEC

Part #	3SK255

Description	RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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2 / 8 page

3SK255

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSX

VG1S = VG2S = –2 V, ID = 10

µA

Drain Current

IDSX

0.5

7.0

VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V

Gate1 to Source Cutoff Voltage

VG1S(off)

–1.0

+1.0

VDS = 3.5 V, VG2S = 3 V, ID = 10

µA

Gate2 to Source Cutoff Voltage

VG2S(off)

0.5

1.0

VDS = 3.5 V, VG1S = 3 V, ID = 10

µA

Gate1 Reverse Current

IG1SS

±20

VDS = 0, VG2S = 0, VG1S =

±6 V

Gate2 Reverse Current

IG2SS

±20

VDS = 0, VG1S = 0, VG2S =

±6 V

Forward Transfer Admittance

|yfs|14

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

f = 1 kHz

Input Capacitance

Ciss

1.2

1.7

2.2

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

Output Capacitance

Coss

0.5

1.0

1.5

f = 1 MHz

Reverse Transfer Capacitance

Crss

0.01

0.03

Power Gain

Gps

VDS = 3.5 V, VG2S = 3 V, ID = 7 mA

Noise Figure

1.8

3.0

f = 900 MHz

IDSX Classification

Rank

U1G

Marking

U1G

IDSX (mA)

0.5 to 7.0

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