TSL251R datasheet(4/11 Pages) AMSCO

4 / 11 page

TSL250R, TSL251R, TSL252R

LIGHT-TO-VOLTAGE OPTICAL SENSORS

TAOS028H − SEPTEMBER 2007

The LUMENOLOGY r Company

www.taosinc.com

Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 635 nm, RL = 10 kΩ (unless otherwise noted)

(see Notes 3, 4, and 5)

PARAMETER

TEST

TSL250R

TSL251R

TSL252R

UNIT

PARAMETER

TEST

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

Dark voltage

Ee = 0

VOM

Maximum output

voltage

VDD = 4.5 V

3.0

3.3

3.0

3.3

3.0

3.3

Ee = 14.6 μW/cm2

1.5

2.5

Output voltage

Ee = 38.5 μW/cm2

1.5

2.5

Output voltage

Ee = 196 μW/cm2

1.5

2.5

Ee = 14.6 μW/cm2,

1.6

mV/°C

Temperature

Ee = 14.6 μW/cm ,

TA = 0°C to 70°C

0.08

%/°C

Temperature

coefficient of

Ee = 38.5 μW/cm2,

1.6

mV/°C

αvo

coefficient of

output voltage

(V )

Ee = 38.5 μW/cm ,

TA = 0°C to 70°C

0.08

%/°C

(VO)

Ee = 196 μW/cm2,

1.6

mV/°C

Ee = 196 μW/cm ,

TA = 0°C to 70°C

0.08

%/°C

Irradiance

λp = 635 nm,

See Notes 5 and 7

137

10.2

mV/( W/cm2)

Irradiance

responsivity

λp = 880 nm,

See Notes 6 and 7

127

9.4

mV/(μW/cm2)

Ee = 14.6 μW/cm2

1.1

1.7

IDD

Supply current

Ee = 38.5 μW/cm2

1.1

1.7

pp y

Ee = 196 μW/cm2

1.1

1.7

NOTES: 3. Measurements are made with RL = 10 kΩ between output and ground.

4. Optical measurements are made using small-angle incident radiation from an LED optical source.

5. The input irradiance Ee is supplied by an AlInGaP LED with peak wavelength λp = 635 nm

6. The input irradiance Ee is supplied by a GaAlAs LED with peak wavelength λp = 880 nm

7. Irradiance responsivity is characterized over the range VO = 0.05 to 2.9 V. The best-fit straight line of Output Voltage VO versus

irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.

Dynamic Characteristics at TA = 25°C (see Figure 1)

PARAMETER

TEST CONDITIONS

TSL250R

TSL251R

TSL252R

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

Output pulse rise time

VDD = 5 V,

λp = 635 nm

260

μs

Output pulse fall time

VDD = 5 V,

λp = 635 nm

260

μs

Vn Output noise voltage

VDD = 5 V,

f = 1000 Hz

Ee = 0,

0.8

0.7

0.6

μV/√Hz

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