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GD421SD Datasheet(PDF) 1 Page - E-Tech Electronics LTD

Part # GD421SD
Description  The GD421SD is designed for low power rectification
PDF  2 Pages
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Manufacturer  ETL [E-Tech Electronics LTD]
Direct Link  http://e-tech.com.hk
Logo ETL - E-Tech Electronics LTD

GD421SD Datasheet(HTML) 1 Page - E-Tech Electronics LTD

  GD421SD Datasheet HTML 1Page - E-Tech Electronics LTD GD421SD Datasheet HTML 2Page - E-Tech Electronics LTD  
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CORPORATION
1/2
ISSUED DATE :2005/05/20
REVISED DATE :
G
G D
D 442211S
S D
D
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S C
C H
H O
O T
T T
T K
K Y
Y B
B A
A R
R R
R II E
E R
R D
D II O
O D
D E
E
V
V O
O L
L T
T A
A G
G E
E 44 00 V
V ,, C
C U
U R
R R
R E
E N
N T
T 00 .. 11 A
A
Description
The GD421SD is designed for low power rectification.
Package Dimensions
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.85
1.05
A1
0
0.10
L
0.20
0.40
A2
0.80
1.00
b
0.25
0.40
D
1.15
1.45
c
0.10
0.18
E
1.60
1.80
HE
2.30
2.70
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
Storage Temperature
Tstg
-40 ~ +125
Maximum Recurrent Peak Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRPS
28
V
Maximum DC Blocking Voltage
VDC
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
1.0
A
Typical Junction Capacitance between Terminal
CJ
6.0
pF
Maximum Average Forward Rectified Current
Io
0.1
A
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
-
V
IR=50 A
VF(1)
-
-
340
mV
IF=10mA
Forward Voltage
VF(2)
-
-
550
mV
IF=100mA
Reverse Leakage Current
IR
-
-
30
A
VR=10V


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