GE75NF75 datasheet(2/4 Pages) ETL

2 / 4 page

GE75NF75

Page: 2/4

ISSUED DATE :2006/09/05

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250uA

Gate Threshold Voltage

VGS(th)

2.0

4.0

VDS=VGS, ID=250uA

Forward Transconductance

gfs

VDS=15V, ID=40A

Gate-Source Leakage Current

IGSS

±100

VGS= ±25V

Drain-Source Leakage Current(Tj=25 : )

VDS=75, VGS=0

Drain-Source Leakage Current(Tj=55 : )

IDSS

VDS=60V, VGS=0

Static Drain-Source On-Resistance3

RDS(ON)

VGS=10V, ID=37.5A

Total Gate Charge3

114

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Change

Qgd

ID=30A

VDS=30V

VGS=10V

Turn-on Delay Time3

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS=30V

VGS=10V

RG=3

RL=1

Input Capacitance

Ciss

7000

Output Capacitance

Coss

400

Reverse Transfer Capacitance

Crss

VGS=0V

VDS=30V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage3

VSD

1.5

IS=75A, VGS=0V, Tj=25 :

Reverse Recovery Time3

Trr

Reverse Recovery Charge

Qrr

143

IS=30A, VGS=0V

dI/dt=100A/ s

Continuous Source Current (Body Diode)

VD= VG=0V, VS=1.5V

Notes: 1. Pulse width limited by safe operating area.

2. Starting Tj=25 : , VDD=20V, L=0.1mH, RG=25 , IAS=20A.

3. Pulse width 300us, duty cycle 2%.

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