74HC2G66GD datasheet(6/23 Pages) NXP

6 / 23 page

74HC_HCT2G66

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Product data sheet

Rev. 10 — 3 October 2013

6 of 23

NXP Semiconductors

74HC2G66; 74HCT2G66

Dual single-pole single-throw analog switch

[1]

Typical values are measured at Tamb = 25 C.

10.1 Test circuits

input capacitance

3.5

CPD

power dissipation

capacitance

-9-

CS(ON)

ON-state capacitance

74HCT2G66

VIH

HIGH-level

input voltage

VCC = 4.5 V to 5.5 V

2.0

1.6

2.0

VIL

LOW-level

input voltage

VCC = 4.5 V to 5.5 V

1.2

0.8

input leakage current

nE; VI =VCC or GND; VCC =5.5 V

1.0

A

IS(OFF)

OFF-state

leakage current

nY or nZ; VCC = 5.5 V; see Figure 6

0.1

1.0

A

IS(ON)

ON-state

leakage current

nY or nZ; VCC = 5.5 V; see Figure 7

0.1

1.0

A

ICC

supply current

nE, nY and nZ = VCC or GND;

VCC = 4.5 V to 5.5 V

A

I

additional supply

current

nE = VCC  2.1 V; IO =0 A;

VCC = 4.5 V to 5.5 V;

375

410

A

input capacitance

3.5

CPD

power dissipation

capacitance

-9-

CS(ON)

ON-state capacitance

Table 7.

Static characteristics …continued

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

40 C to +85 C

40 C to +125 C Unit

Min

Typ[1]

Max

Min

Max

VI = VCC or GND and VO = GND or VCC.VI = VCC or GND and VO = open circuit.

Fig 6.

Test circuit for measuring OFF-state

leakage current

Fig 7.

Test circuit for measuring ON-state

leakage current

001aaj465

VIL

VCC

GND

001aaj466

VIH

VCC

GND

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