NMOS multichannel detector head

C5964 series

s

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Supply voltage (for digital circuitry)

-0.5 to +7

V

Supply voltage (for analog circuitry)

±18

V

Digital input voltage

-

V

Operating temperature

Topr

+10 to +30

°C

Storage temperature

Tstg

0 to +50

°C

s

Parameter

Symbol

Min.

Typ.

Max.

Unit

High level

+2.0

-

V

Digital input

Low level

-0.5

-

+0.8

V

Master clock (CLK) pulse frequency

-

-

375

kHz

Video signal readout frequency

fv

-

-

Hz

Master start (start) pulse width

tst

-

-

s

High level (Io= -6 mA)

+2.0

-

-

V

Digital output

Low level (Io=+6 mA)

--

+0.8

V

Digital

+4.75

+5.0

+5.25

V

Power supply conditions:

Rated voltage

Analog

±14.5

±15.0

±15.5

V

--

-

+2.0

A

+15 Vdc

-

-

-

+100

mA

Power supply conditions:

Current consumption

-15 Vdc

-

-

-

-100

mA

*1: Including the current consumption of the Peltier element incorporated in the NMOS linear image sensor (S5930 series, etc.)

s

Parameter

Built in sensors

Symbol

Min.

Typ.

Max.

Unit

Spectral response range

λ

-

200 to 1000

-nm

S5930/S5931 series

-

600

-

Peak sensitivity wavelength

S8382/S8383 series

λp

-

750

-

nm

S5930 series

-

50

-

S5931 series

-

25

-

S8382 series

-

50

-

Saturation output charge

S8383 series

Qsat

-25-

pC

S5930 series

-

0.009

0.03

S5931 series

-

0.004

0.01

S8382 series

-

0.009

0.03

Dark current

S8383 series

-

0.004

0.01

pA/pixel

PRNU

-

-

±3

%

S5930 series

-

0.2

-

S5931 series

-

0.4

-

S8382 series

-

0.2

-

Conversion gain

S8383 series

Gc

-

0.4

-

V/pC

*2: Use for “A” light source. 50 % of saturation, excluding first and last pixels.