InGaAs PIN photodiode array

G7150/G7151-16

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.

WAVELENGTH (µm)

2.0

0.5

0

(Typ. Ta=25 ˚C)

0.8

1.0

1.2

1.4

1.6

1.8

1

0.6

WAVELENGTH (µm)

(Typ. Ta=25

˚C)

1.0

1.2

1.4

1.6

1.8

0.8

0

1

-1

2

10 G

Ω

-40

-20

0

40

60

80

100

AMBIENT TEMPERATURE (˚C)

1 G

Ω

10 M

Ω

1 M

Ω

100 M

Ω

100 G

Ω

20

G7150-16

G7151-16

0.5 ± 0.1

0.6 ± 0.3

ACTIVE AREA

(16 ×) 0.08 × 0.2

22.9 ± 0.3

2.45 ± 0.15

0.46

0.8 ± 0.3

PIN No.

DETECTOR

1

3

5

7

9

PIN No.

DETECTOR

KC

11

13

15

16

PIN No.

DETECTOR

14

12

KC

10

8

PIN No.

DETECTOR

6

4

2

WINDOW

PHOTOSENSITIVE

SURFACE

INDEX MARK

1

10

100

1000

10000

0.01

0.1

1

10

(Typ. Ta=25 ˚C)

G7150-16

G7151-16

REVERSE VOLTAGE (V)

REVERSE VOLTAGE

1

10

1000

100

0.01

0.1

1

10

(Typ. Ta=25 ˚C, f=1 MHz)

G7150-16

G7151-16

Cat. No. KIRD1043E04

May 2003 DN

s Spectral response

KIRDB0002EB

s Photo sensitivity temperature

characteristic

KIRDB0042EA

s Dark current vs. reverse voltage

s Terminal capacitance vs.

reverse voltage

s Shunt resistance vs. ambient

temperature

KMIRB0013EA

s Dimensional outlines (unit: mm)

KIRDA0144EB

KIRDA0030ED

KIRDB0254EA

KIRDB0255EB

G7150-16

G7151-16

PIN No.

DETECTOR

1

3

5

7

9

PIN No.

DETECTOR

KC

11

13

15

16

PIN No.

DETECTOR

14

12

KC

10

8

PIN No.

DETECTOR

6

4

2

0.5 ± 0.1

0.6 ± 0.3

WINDOW

ACTIVE AREA

(16 ×) 0.45 × 1

22.9 ± 0.3

2.45 ± 0.15

0.46

1.0 ± 0.2

PHOTOSENSITIVE

SURFACE

INDEX MARK

2