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H7680 Datasheet(PDF) 2 Page - Hamamatsu Corporation |
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H7680 Datasheet(HTML) 2 Page - Hamamatsu Corporation |
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2 / 4 page ![]() 53 Characteristics (Cathode radiant sensitivity, Quantum efficiency, Gain) TPMOB0148EA TPMOB0092EA 12 3 4 5 6 108 107 106 105 104 102 103 CONTROL VOLTAGE (V) 100 10 1 0.1 0.01 200 400 600 800 WAVELENGTH (nm) QUANTUM EFFICIENCY CATHODE RADIANT SENSITIVITY PMT Module with Added Functions Parameter H7680 H7680-01 Gate Mode Gate Signal Input Gain Control Mode Gate Width (FWHM) Rise Time, Fall Time Repetition Rate Switching Ratio Switching Noise *4 Delay Time Jitter Level Input Impedance Pulse Width Input Voltage Input Impedance Max. Max. Max. Max. Max. 20 100 107 60 200 1 C-MOS (High level: +3.5 V to +5 V) 50 +2.0 to +5.0 10 Normally ON OFF time: 100 ns to ∞ 100 ns to ∞ Normally OFF ON time: 30 ns to ∞ 30 ns to ∞ Unit — — ns kHz — mV ns ns — Ω — V k Ω *4: Load resistance 50 Ω, peak to peak |
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