2

PbS photoconductive detector

P9217

WAVELENGTH (µm)

(Typ. T=25 ˚C)

14

23

5

0

20

40

60

80

100

2

ELEMENT TEMPERATURE (˚C)

(Typ.)

10

1

10

2

-10

10

3

0

10203040506070

LIGHT SOURCE: BLACK BODY 500 K

CHOPPING FREQUENCY: 600 Hz

SUPPLY VOLTAGE: 15 V

(Typ. Ta=25 ˚C, FULLY ILLUMINATED)

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

DEPENDENT ON NEP

ELEMENT TEMPERATURE (˚C)

(Typ.)

10

1

10

2

10

3

0

10203040506070

-10

DARK

RESISTANCE

RISE TIME

CHOPPING FREQUENCY (Hz)

(Typ. Ta=25 ˚C)

10

1

10

2

10

3

10

1

10

2

10

3

LIGHT SOURCE: BLACK BODY 500 K

SUPPLY VOLTAGE: 15 V

tr: 200 µs

S/N

S

N

10

20

30

40

50

60

(Typ. Ta=25 ˚C)

0

00

200

400

600

800

2

4

6

8

1

3

5

7

NOISE

SIGNAL

LIGHT SOURCE: BLACK BODY 500 K

CHOPPING FREQUENCY: 600 Hz

FREQUENCY BANDWIDTH: 60 Hz

s Spectral response

KIRDB0301EA

KIRDB0046EA

s S/N vs. supply voltage

s S/N vs. chopping frequency

KIRDB0047EB

KIRDB0302EA

s Photo sensitivity temperature characteristic

s Dark resistance, rise time temperature characteristics

KIRDB0303EA

KIRDB0050EA

s Photo sensitivity linearity

If voltage of higher than 60 V is applied,

the noise increases exponentially, de-

grading the S/N. The device should be

operated at 60 V or less.

Increasing the chopping frequency re-

duces the 1/f noise and results in an S/N

improvement. The S/N can also be im-

proved by narrowing the noise bandwidth

using a lock-in amplifier.

Cooling the device enhances its sensi-

tivity, but the sensitivity also depends

on the load resistance in the circuit.

By making the incident light spot smaller

than the active area, the upper limit of

the linearity becomes lower.